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November 2013
FDA28N50F
N-Channel UniFET TM FRFET ? MOSFET
500 V, 28 A, 175 m Ω
Features
? R DS(on) = 140 m Ω (Typ.) @ V GS = 10 V, I D = 14 A
? Low Gate Charge (Typ. 80 nC)
? Low C rss (Typ. 38 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
Applications
? PDP TV
? Uninterruptible Power Supply
? AC-DC Power Supply
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET ? MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
G
D
S
TO-3PN
S
MOSFET Maximum Ratings T C = 25
o
C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDA28N50F
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
28
17
V
A
I DM
Drain Current
- Pulsed
(Note 1)
112
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
2352
28
31
20
310
2.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FDA28N50F
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.4
40
o
C/W
?2012 Fairchild Semiconductor Corporation
FDA28N50F Rev. C1
1
www.fairchildsemi.com
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